2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f 2SA1576A transistor (pnp) features power dissipation p cm : 200 mw (tamb=25 ) collector current i cm : -150 ma collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -50 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -50 a, i c =0 -6 v collector cut-off current i cbo v cb = -60 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -6 v, i c =0 -0.1 a dc current gain h fe(1) v ce = -6 v, i c = -1 ma 120 560 collector-emitter saturation voltage v ce(sat) i c = -50 ma, i b = -5 ma -0.5 v transition frequency f t v ce = -12 v, i c =- 2 ma, f=30mhz 100 mhz collector output capacitance c ob v cb = -12 v, i e =0, f= 1 mhz 5 pf classification of h fe(1) rank q r s range 120-270 180-390 270-560 marking fq fr fs unit: mm sot-323 1. base 2. emitter 3. collector 2SA1576A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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